Search results for "PIXEL DETECTORS"
showing 10 items of 11 documents
Incomplete Charge Collection at Inter-Pixel Gap in Low- and High-Flux Cadmium Zinc Telluride Pixel Detectors.
2022
The success of cadmium zinc telluride (CZT) detectors in room-temperature spectroscopic X-ray imaging is now widely accepted. The most common CZT detectors are characterized by enhanced-charge transport properties of electrons, with mobility-lifetime products μeτe > 10−2 cm2/V and μhτh > 10−5 cm2/V. These materials, typically termed low-flux LF-CZT, are successfully used for thick electron-sensing detectors and in low-flux conditions. Recently, new CZT materials with hole mobility-lifetime product enhancements (μhτh > 10−4 cm2/V and μeτe > 10−3 cm2/V) have been fabricated for high-flux measurements (high-flux HF-CZT detectors).…
Room-temperature performance of 3 mm-thick cadmium-zinc-telluride pixel detectors with sub-millimetre pixelization.
2020
Cadmium–zinc–telluride (CZT) pixel detectors represent a consolidated choice for the development of room-temperature spectroscopic X-ray imagers, finding important applications in medical imaging, often as detection modules of a variety of new SPECT and CT systems. Detectors with 3–5 mm thicknesses are able to efficiently detect X-rays up to 140 keV giving reasonable room-temperature energy resolution. In this work, the room-temperature performance of 3 mm-thick CZT pixel detectors, recently developed at IMEM/CNR of Parma (Italy), is presented. Sub-millimetre detector arrays with pixel pitch less than 500 µm were fabricated. The detectors are characterized by good room-temperature performan…
Room-Temperature X-ray response of cadmium-zinc-Telluride pixel detectors grown by the vertical Bridgman technique
2020
In this work, the spectroscopic performances of new cadmium–zinc–telluride (CZT) pixel detectors recently developed at IMEM-CNR of Parma (Italy) are presented. Sub-millimetre arrays with pixel pitch less than 500 µm, based on boron oxide encapsulated vertical Bridgman grown CZT crystals, were fabricated. Excellent room-temperature performance characterizes the detectors even at high-bias-voltage operation (9000 V cm−1), with energy resolutions (FWHM) of 4% (0.9 keV), 1.7% (1 keV) and 1.3% (1.6 keV) at 22.1, 59.5 and 122.1 keV, respectively. Charge-sharing investigations were performed with both uncollimated and collimated synchrotron X-ray beams with particular attention to the mitigation o…
Studies for low mass, large area monolithic silicon pixel detector modules using the MALTA CMOS pixel chip
2021
Abstract The MALTA monolithic silicon pixel sensors have been used to study dicing and thinning of monolithic silicon pixel detectors for large area and low mass modules. Dicing as close as possible to the active circuitry will allow to build modules with very narrow inactive regions between the sensors. Inactive edge regions of less than 5 μ m to the electronic circuitry could be achieved for 100 μ m thick sensors. The MALTA chip (Cardella et al., 2019) also offers the possibility to transfer data and power directly from chip to chip. Tests have been carried out connecting two MALTA chips directly using ultrasonic wedge wire bonding. Results from lab tests show that the data accumulated in…
DEPFET pixel detector in the Belle II experiment
2019
Belle II DEPFET and PXD Collaboration: et al.
Electrical Characterization of CdTe pixel detectors with Al Schottky anode
2014
Abstract Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage ( I–V ) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe con…
Characterisation and mitigation of beam-induced backgrounds observed in the ATLAS detector during the 2011 proton-proton run
2013
This paper presents a summary of beam-induced backgrounds observed in the ATLAS detector and discusses methods to tag and remove background contaminated events in data. Triggerrate based monitoring of beam-related backgrounds is presented. The correlations of backgrounds with machine conditions, such as residual pressure in the beam-pipe, are discussed. Results from dedicated beam-background simulations are shown, and their qualitative agreement with data is evaluated. Data taken during the passage of unpaired, i.e. non-colliding, proton bunches is used to obtain background-enriched data samples. These are used to identify characteristic features of beam-induced backgrounds, which then are …
Energy Recovery of Multiple Charge Sharing Events in Room Temperature Semiconductor Pixel Detectors
2021
Multiple coincidence events from charge-sharing and fluorescent cross-talk are typical drawbacks in room-temperature semiconductor pixel detectors. The mitigation of these distortions in the measured energy spectra, using charge-sharing discrimination (CSD) and charge-sharing addition (CSA) techniques, is always a trade-off between counting efficiency and energy resolution. The energy recovery of multiple coincidence events is still challenging due to the presence of charge losses after CSA. In this work, we will present original techniques able to correct charge losses after CSA even when multiple pixels are involved. Sub-millimeter cadmium–zinc–telluride (CdZnTe or CZT) pixel detectors we…
Charge loss correction in CZT pixel detectors at low and high fluxes: analysis of positive and negative pulses
2018
Charge losses are typical drawbacks in cadmium–zinc–telluride (CZT) pixel detectors. The effects of these phenomena are strongly related to the interaction point of the photons and are more severe for photon interactions at the inter-pixel gap and near the pixelated anode. In this work, we present some original techniques able to correct charge losses in pixelated CZT detectors at both low and high fluxes. The height, the shape and the arrival time of collected- and induced-charge pulses with both positive and negative polarities are analysed to recover charge losses after the application of charge sharing addition (CSA). Sub-millimetre CZT pixel detectors, fabricated by different manufactu…
DEPFET Active Pixel Detectors for a Future Linear e(+)e(-) Collider
2013
arXiv:1212.2160v1.-- et al.